technical data pnp silicon switching transistor qualified per mil - prf - 19500/512 devices qualified level 2N4029 2n4033 jan jantx jantxv maximum ratings ratings symbol value unit collector - emitter voltage v ceo 80 vdc collector - base voltag e v cbo 80 vdc emitter - base voltage v ebo 5.0 vdc collector current i c 1.0 adc 2N4029 1 2n4033 2 total power dissipation @ t a = +25 0 c p t 0.5 0.8 w operating & storage junction temperature range t j , t stg - 55 to +200 0 c thermal characteristics c haracteristics symbol max. unit thermal resistance, junction - to - case r q jc 25.0 0 c/w 1) derate linearly 2.86 mw/ 0 c for t a > +25 0 c 2) derate linearly 4.56 mw/ 0 c for t a > +25 0 c to - 18* (to - 206aa) 2N4029 to - 39* (to - 205ad) 2n4033 *see appendix a for p ackage outline electrical characteristics (t a = 25 0 c unless otherwise noted) characteristics symbol min. max. unit off characteristics collector - base cutoff current v cb = 80 vdc v cb = 60 v dc i cbo 10 10 m adc h adc emitter - base cutoff current v be = 5.0 vdc v be = 3.0 vdc i ebo 25 10 m adc h adc collector - emitter cutoff voltage v be = 40 vdc; v ce = 60 vdc i cex 25 h adc 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 1 of 2
2n 4029, 2n4033 jan series electrical characteristics (con?t) characteristics symbol min. max. unit on characteristics (3) forward - current transfer ratio i c = 100 m adc, v ce = 5.0 vdc i c = 100 madc, v ce = 5.0 vdc i c = 500 madc, v ce = 5.0 vdc i c = 1.0 adc, v ce = 5.0 vdc h fe 50 100 70 25 300 collector - emitter saturation voltage i c = 150 madc, i b = 15 madc i c = 500 madc, i b = 50 madc i c = 1.0 adc, i b = 100 madc v ce(sat) 0.1 5 0.50 1.0 vdc base - emitter voltage i c = 150 madc, i b = 15 madc i c = 500 madc, i b = 50 madc v be(sat) 0.9 1.2 vdc dynamic characteristics magnitude of common emitter small - signal short - circuit forward - current transfer ratio i c = 50 madc, v ce = 10 vdc, f = 100 mhz ? h fe ? 1.5 6.0 output capacitance v cb = 10 vdc, i e = 0, 100 khz f 1.0 mhz c obo 20 pf input capacitance v eb = 0.5 vdc, i c = 0, 100 khz f 1.0 mhz c ibo 80 pf switching characteristics on - time v cc = 3 1.9 vdc; i c = 500 madc; i b1 = 50 madc t d 15 h s rise time v cc = 31.9 vdc; i c = 500 madc; i b1 = 50 madc t r 25 h s (3) pulse test: pulse width = 300 m s, duty cycle 2.0%. 6 lake street, lawrence, ma 01841 1 - 800 - 446 - 1158 / (978) 794 - 1666 / fax: (978) 689 - 0803 120101 page 2 of 2
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